Pradyot Yadav

Pradyot Yadav

Ph.D. Candidate @ MIT | NDSEG Fellow | IEEE MTT-S Graduate Fellow

Building chips to achieve the ultimate performance in electronics through heterogeneous integration.

About

I am a 4th year Ph.D. candidate at MIT, co-advised by Tomás Palacios and Ruonan Han. I'm interested in advancing 3D heterogeneous integration for mmWave/sub-THz systems, novel sub-THz GaN transistors, and advanced packaging technologies using DTCO/STCO. My research focuses on integrating GaN, Si CMOS, glass, and diamond substrates for next-generation RF systems.

With extensive experience in high-frequency device fabrication, circuit design, and advanced packaging, I work at the intersection of device physics, circuit design, and system integration. I maintain strong relationships with defense primes, national labs, and industry partners.

Key Achievements

  • Best Student Award - ICNS-15Electronic Devices, 2025
  • IEEE RFIC Best Student Paper Finalist2025
  • NDSEG FellowshipNational Defense and Science Graduate, 2023
  • IEEE MTT-S Graduate Fellowship2023
  • 1st Place IMS PA Design CompetitionIEEE International Microwave Symposium, 2019
  • Barry Goldwater Scholarship2021
View all honors & awards
  • Intel Andy Grove Scholarship2020
  • NSF Graduate Research FellowshipNational Science Foundation, 2023
  • Qualcomm Innovation Fellowship Finalist2024
  • Georgia Tech ECE Best Undergraduate Research2022
  • Eagle Scout, Order of the Arrow (OA)Boy Scouts of America, 2018
  • SRC Jump 2.0 CHIMES Best Poster2023, 2024 & 2025

Journey

MIT Logo

Massachusetts Institute of Technology

Ph.D. in Electrical Engineering, GPA 5.00

Minor: Public Policy and Security Studies of Emerging Technologies

Aug 2022 - Present
Georgia Tech Logo

Georgia Institute of Technology

Bachelor of Science in Electrical Engineering, GPA 3.60/4.00

Study Abroad - Georgia Tech Lorraine | Metz, France

Aug 2018 - May 2022
MIT Logo

MIT - Tomás Palacios Group & Ruonan Han Group

Graduate Research Assistant

Aug 2022 - Present
IBM Logo

IBM Quantum

Senior Quantum Research Scientist Intern

Summer 2025
IBM Logo

IBM Quantum

Quantum Research Scientist Intern

Summer 2024
Raytheon Logo

Raytheon - Advanced Technology Division

Part-Time Graduate Research Intern

Dec 2023 - Present
Qorvo Logo

Qorvo

R&D Intern

May 2020 - Dec 2021

Publications

ICoG Paper

Integrated Circuit-on-Glass (ICoG): A Self-Packaged 3D-Heterogeneous Integration (3DHI) Platform for Millimeter-Wave Circuits With Embedded GaN-on-Si Dielets

IEEE Transactions on Microwave Theory and Techniques, January 2026

Pradyot Yadav, Xingchen Li, Tomás Palacios, Madhavan Swaminathan

3D-mmWIC Paper

3-D-Millimeter Wave Integrated Circuits (3D-mmWIC) Using GaN-on-Si Dielets With Si CMOS for 5G FR2 Power Amplifiers

IEEE Transactions on Microwave Theory and Techniques, 2026

Pradyot Yadav, Jinchen Wang, Patrick Darmawi-Iskandar, John Niroula, Ulrich L. Rohde, Ruonan Han, Tomás Palacios, and collaborators at Georgia Tech and Air Force Research Laboratory

3D-mmWIC RFIC Paper

3D-Millimeter Wave Integrated Circuit (3D-mmWIC): A Gold-Free 3D-Integration Platform for Scaled RF GaN-on-Si Dielets with Intel 16 Si CMOS

2025 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), June 2025 • Best Student Paper Finalist

Pradyot Yadav, Jinchen Wang, Patrick Darmawi-Iskandar, John Niroula, Ulrich L. Rohde, Ruonan Han, Tomás Palacios, and collaborators at Georgia Tech and Air Force Research Laboratory

GaN in Glass Paper

First Demonstration of Highly Scaled RF GaN-on-Si Dielets Embedded in Glass Interposer

2025 IEEE/MTT-S International Microwave Symposium (IMS), June 2025

Pradyot Yadav, Xingchen Li, John Niroula, Patrick Darmawi-Iskandar, Ulrich L. Rohde, Tomás Palacios, Madhavan Swaminathan

Amplifier-on-Glass Paper

Heterogeneously-Integrated Amplifier-on-Glass with Embedded Gallium Nitride (GaN) Dielet for mmWave Applications

2025 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), June 2025

Xingchen Li*, Pradyot Yadav*, Tomás Palacios, Madhavan Swaminathan

*Equal contribution

High Temperature HEMTs Paper

Record High Temperature Performance in Scaled AlGaN/GaN-on-Si HEMTs up to 500°C

2024 Device Research Conference (DRC), June 2024

Authors: John Niroula, Matthew A. Taylor, Qingyun Xie, Pradyot Yadav, Shisong Luo, Yuji Zhao, Tomás Palacios

High Temperature Contacts Paper

High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C

Applied Physics Letters, Vol. 124, Issue 20, May 2024

Authors: John Niroula, Qingyun Xie, Nitul S. Rajput, Patrick K. Darmawi-Iskandar, Sheikh Ifatur Rahman, Shisong Luo, Rafid Hassan Palash, Bejoy Sikder, Mengyang Yuan, Pradyot Yadav, Gillian K. Micale, Nadim Chowdhury, Yuji Zhao, Siddharth Rajan, Tomás Palacios

Engineered Substrate Paper

First Demonstration of GaN RF HEMTs on Engineered Substrate

2023 Device Research Conference (DRC), June 2023

Pradyot Yadav, Qingyun Xie, John Niroula, Gillian K. Micale, Hemant Pal, Tomás Palacios

DTCO Paper

Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C

2023 IEEE Symposium on VLSI Technology and Circuits, June 2023

Qingyun Xie, Mengyang Yuan, John Niroula, Bejoy Sikder, Shisong Luo, Kai Fu, Nitul S. Rajput, Ayan Biswas Pranta, Pradyot Yadav, Yuji Zhao, Nadim Chowdhury, Tomás Palacios

Doherty Amplifier Paper

Optimizing the Doherty Amplifier: Design of a 3-GHz GaN Doherty Amplifier Achieving 60% Efficiency

IEEE Microwave Magazine, February 2020 • 1st Place, IMS 2019 PA Student Design Competition

Pradyot Yadav

In the News

New 3D chips could make electronics faster and more energy-efficient

MIT News • June 18, 2025

Lead author Pradyot Yadav: “We've combined the best of what exists in silicon with the best possible gallium nitride electronics. These hybrid chips can revolutionize many commercial markets.”

MIT-led team develops low-cost, scalable process for integrating GaN transistors onto silicon CMOS chips

Semiconductor Today • June 2025

Coverage of breakthrough 3D-mmWIC technology for heterogeneous integration of GaN and silicon CMOS.

New 3D chips could make electronics faster and more energy-efficient

Silicon Semiconductor • Video Interview • 2025

Video interview with Pradyot Yadav discussing the scalable, low-cost fabrication process for integrating GaN transistors onto silicon CMOS chips.

MIT's New 3D Chips Could Make Electronics Faster and More Energy-Efficient

SciTechDaily • June 2025

Feature on gold-free 3D integration platform for scaled RF GaN-on-Si dielets with Intel 16 Si CMOS.

MIT reveals 3D mmWave GaN on CMOS tech

Compound Semiconductor News • 2025

Technical analysis of the copper-bonding approach for integrating GaN dielets with silicon CMOS.

MIT Researchers Integrate Gallium Nitride Transistors onto Silicon Chips for Enhanced Electronics

Impact Lab • June 25, 2025

Discussion of applications in wireless transmitters, quantum computing, and defense technology.

New Hybrid Integration Technology Promises GaN-on-Si at Scale

Embedded.com • July 2025

In-depth interview discussing the scalability and commercial applications of the new integration process.

Research Bits: July 1

Semiconductor Engineering • July 2025

Featured research on 3D heterogeneous integration for next-generation electronics.

Outstanding Students Honored at Annual Celebration

Georgia Tech News Center • May 11, 2022

Pradyot Yadav honored for outstanding undergraduate research in electrical and computer engineering.

Electrical Engineering Student Pradyot Yadav Wins 2021 Barry Goldwater Scholarship

Georgia Tech ECE • April 2021

Yadav named one of three Georgia Tech students to win the prestigious Goldwater Scholarship. Quote: “My being awarded this scholarship marks the start of a career focused on the cutting edge in RF/mmWave research.”

Three Engineering Students Win 2021 Barry Goldwater Scholarship

Georgia Tech College of Engineering • April 2021

Pradyot Yadav recognized as one of only 410 scholars selected nationwide from over 1,250 nominated STEM students.

Yadav Wins Top Student Design Prize at IMS

Georgia Tech ECE • June 2019

Rising sophomore Pradyot Yadav wins first place in RF Power Amplifier Design at the 2019 International Microwave Symposium, competing against seniors and graduate students from top institutions.

North Penn Science, Tech Students Excel at Local Competitions

Patch.com • 2016

Pradyot Yadav awarded 1st place in Engineering and received the IEEE Engineering Award at local science competition.

Skills & Expertise

Device Fabrication

200/300mm Wafer ProcessingGaN RF HEMTIII-V SemiconductorsE-beam LithographyPhotolithographyPECVDSputter DepositionICP-RIESEMAFM

Circuit Design

5G NR/6GMMICsAnalog ICPower AmplifiersDoherty PAClass E/FLNAsRF SwitchesImpedance MatchingPhysical Modeling

Advanced Packaging

2.5D/3D/3.5D3DICFlip Chip BondingCu/Cu BondingHybrid BondingCu SAP/DamasceneGlass Interposer

Software & Tools

EDA Tools

ADSAWRCadenceHFSSKiCAD

PDKs

Intel 16/22nmGF 150 GaNQorvo QGaN15

Programming

Languages

PythonC++MATLABVerilogHTML

Hardware

STM32FPGAMicrocontrollers

Instrumentation

VNAVector Signal GeneratorPower MeterPulse-IVProbe StationSpectrum Analyzer

Languages

Hindi (Native)English (Native)German (Conversational)French (Basic)

Let's Connect

I'm always interested in discussing new opportunities, collaborations, or research projects.